0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

M. Usami*, Yuichi Matsushima, Y. Takahashi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

本文言語English
ページ(範囲)244-249
ページ数6
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
1
2
DOI
出版ステータスPublished - 1995 6
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 原子分子物理学および光学

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