Silicon on insulator (SOI) technology is used to fabricate a dynamic random access memory (DRAM) capable of low voltage operation. The device uses a body-pulsed sense amplifier and a body-driven equalizer to accelerate low-voltage speed while partially-depleted and fully depleted transistors are used to enhance on-state current. The device's performance is evaluated experimentally.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版物ステータス||Published - 1997 2 1|
|イベント||Proceedings of the 1997 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA|
継続期間: 1997 2 6 → 1997 2 8
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering