10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Tomonari Sato, Koji Takeda, Hiromitsu Imai, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Wataru Kobayashi, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

本文言語English
ホスト出版物のタイトル2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
ページ143-146
ページ数4
DOI
出版ステータスPublished - 2012 12 1
外部発表はい
イベント2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States
継続期間: 2012 8 272012 8 30

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Conference

Conference2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
CountryUnited States
CitySanta Barbara, CA
Period12/8/2712/8/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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