10-Gbit/s inp-based high-performance monolithic photoreceivers consisting of p-i-n photodiodes and hemt's

10-Gbit/s monolithic receiver OEIC's for 1.55ftm optical transmission systems were fabricated using a stacked layer structure of p-i-n photodiodes and HEMT's grown on InP substrates by single-step MOVPE. A receiver OEIC with a large O/E conversion factor was obtained by adding a three-stage differential amplifier to a conventional feedback amplifier monolithically integrated with a surface-illuminated p-i-n photodiode. The circuit configuration gave a preamplifier a transimpcdance of GOdBQ. The receiver OEIC achieved error-free operation at 10 Gbit/s without a postamplifier even with the optical input as low as -10.3dBm because of its large O/E conversion factor of 890V/W. A two-channel receiver OEIC array for use in a 10Gbit/s parallel photorcceiver module based on a PLC platform was made by monolithically integrating multimode WGPD's with HEMT preamplifiers. The side-illuminated structure of the WGPD is suitable for integration with other waveguide-type optical devices. The receiver OEIC arrays were fabricated on a 2-inch wafer with achieving excellent uniformity and a yield over 90%: average transimpedance and average 3-dB-down bandwidth were 43.8 dBf2 and 8.0 GHz. The two channels in the receiver OEIC array also showed sensitivities of -16.1 dBm and - 15.3dBm at 10Gbit/s. The two-channel photoreceiver module was constructed by assembling the OEIC array on a PLC platform. The frequency response of the module was almost the same as that of the OEIC chip and the crosstalk between channels in the module was better than -27dB in the frequency range below 6 GHz. These results demonstrate the feasibility of using our receiver OEIC's in various types of optical receiver systems.