Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.
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