100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, Koji Tominaga

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

元の言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
出版場所Bellingham, WA, United States
出版者Publ by Int Soc for Optical Engineering
ページ363-371
ページ数9
1418
ISBN(印刷物)0819405086
出版物ステータスPublished - 1991
外部発表Yes
イベントLaser Diode Technology and Applications III - Los Angeles, CA, USA
継続期間: 1991 1 231991 1 25

Other

OtherLaser Diode Technology and Applications III
Los Angeles, CA, USA
期間91/1/2391/1/25

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

これを引用

Yamaguchi, T., Yodoshi, K., Minakuchi, K., Tabuchi, N., Bessho, Y., Inoue, Y., Komeda, K., Mori, K., Tajiri, A., & Tominaga, K. (1991). 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. : Proceedings of SPIE - The International Society for Optical Engineering (巻 1418, pp. 363-371). Publ by Int Soc for Optical Engineering.