1.5 Minute-synthesis of continuous graphene films by chemical vapor deposition on Cu foils rolled in three dimensions

研究成果: Article

抄録

We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm 2 ) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C 2 H 4 as a more reactive carbon source than the popular CH 4 . The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7% (550 nm) with sheet resistances of 0.78–1.68 kΩ sq −1 (without doping) and 0.3 kΩ sq −1 (with doping by HNO 3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm 2 min −1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm 2 -graphene per cm 3 -reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm 2 per cm 3 -reactor) is reusable for designing large-scale graphene production processes.

元の言語English
ページ(範囲)319-324
ページ数6
ジャーナルChemical Engineering Science
201
DOI
出版物ステータスPublished - 2019 6 29

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Graphite
Graphene
Metal foil
Chemical vapor deposition
Productivity
Doping (additives)
Quartz
Sheet resistance
Opacity
Carbon
Vapors
Annealing
Heating
Glass
Processing

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering

これを引用

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title = "1.5 Minute-synthesis of continuous graphene films by chemical vapor deposition on Cu foils rolled in three dimensions",
abstract = "We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm 2 ) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C 2 H 4 as a more reactive carbon source than the popular CH 4 . The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7{\%} (550 nm) with sheet resistances of 0.78–1.68 kΩ sq −1 (without doping) and 0.3 kΩ sq −1 (with doping by HNO 3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm 2 min −1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm 2 -graphene per cm 3 -reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm 2 per cm 3 -reactor) is reusable for designing large-scale graphene production processes.",
keywords = "Chemical vapor deposition, Ethylene, Graphene, Productivity, Short reaction time, Three-dimensional reaction field",
author = "Yukuya Nagai and Hisashi Sugime and Suguru Noda",
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T1 - 1.5 Minute-synthesis of continuous graphene films by chemical vapor deposition on Cu foils rolled in three dimensions

AU - Nagai, Yukuya

AU - Sugime, Hisashi

AU - Noda, Suguru

PY - 2019/6/29

Y1 - 2019/6/29

N2 - We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm 2 ) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C 2 H 4 as a more reactive carbon source than the popular CH 4 . The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7% (550 nm) with sheet resistances of 0.78–1.68 kΩ sq −1 (without doping) and 0.3 kΩ sq −1 (with doping by HNO 3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm 2 min −1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm 2 -graphene per cm 3 -reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm 2 per cm 3 -reactor) is reusable for designing large-scale graphene production processes.

AB - We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm 2 ) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C 2 H 4 as a more reactive carbon source than the popular CH 4 . The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7% (550 nm) with sheet resistances of 0.78–1.68 kΩ sq −1 (without doping) and 0.3 kΩ sq −1 (with doping by HNO 3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm 2 min −1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm 2 -graphene per cm 3 -reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm 2 per cm 3 -reactor) is reusable for designing large-scale graphene production processes.

KW - Chemical vapor deposition

KW - Ethylene

KW - Graphene

KW - Productivity

KW - Short reaction time

KW - Three-dimensional reaction field

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