TY - JOUR
T1 - 1.5 Minute-synthesis of continuous graphene films by chemical vapor deposition on Cu foils rolled in three dimensions
AU - Nagai, Yukuya
AU - Sugime, Hisashi
AU - Noda, Suguru
N1 - Funding Information:
This work is financially supported by JSPS KAKENHI [grant number JP25107002], Japan.
PY - 2019/6/29
Y1 - 2019/6/29
N2 - We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm2) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C2H4 as a more reactive carbon source than the popular CH4. The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7% (550 nm) with sheet resistances of 0.78–1.68 kΩ sq−1 (without doping) and 0.3 kΩ sq−1 (with doping by HNO3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm2 min−1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm2-graphene per cm3-reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm2 per cm3-reactor) is reusable for designing large-scale graphene production processes.
AB - We report a high-productivity chemical vapor deposition (CVD) process of graphene by extending the reaction field to three dimensions (3D) and shortening the CVD time to a few minutes. A large Cu foil (5 × 30 cm2) is rolled up and set in a small reactor (3.4 cm in diameter), and a continuous graphene film is obtained uniformly in a short time (1.5 min) by using C2H4 as a more reactive carbon source than the popular CH4. The graphene transferred onto a quartz glass showed optical transmittances of 94.8–96.7% (550 nm) with sheet resistances of 0.78–1.68 kΩ sq−1 (without doping) and 0.3 kΩ sq−1 (with doping by HNO3 vapor). Compared with the previous reports for fast and/or large-scale CVD, our method realized similarly high productivity of 100 cm2 min−1 based on the CVD time despite of the small reactor, and higher productivity of 0.03 cm2-graphene per cm3-reactor per minute based on the reactor volume and total time for high temperature processing (15 min for heating, 1 min for annealing, and 1.5 min for CVD). The knowledge obtained here on the CVD conditions and packing ratio of Cu foils (0.55 cm2 per cm3-reactor) is reusable for designing large-scale graphene production processes.
KW - Chemical vapor deposition
KW - Ethylene
KW - Graphene
KW - Productivity
KW - Short reaction time
KW - Three-dimensional reaction field
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U2 - 10.1016/j.ces.2019.02.038
DO - 10.1016/j.ces.2019.02.038
M3 - Article
AN - SCOPUS:85062592081
VL - 201
SP - 319
EP - 324
JO - Chemical Engineering Science
JF - Chemical Engineering Science
SN - 0009-2509
ER -