1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Runa Kaneko*, Ryosuke Morita, Ryumi Katsuhara, Ryota Yabuki, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

*この研究の対応する著者

研究成果: Article査読

抄録

A 1550 nm-band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side-wall grating is formed in a simultaneous process with the ridge waveguide, and room-temperature continuous-wave single-mode oscillation is achieved. A rather low-threshold current density of about 2.2 kA cm−2 is obtained. Side-mode suppression ratios (SMSRs) are 28 dB just above the threshold current Ith and 44 dB at I/Ith = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.

本文言語English
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
DOI
出版ステータスAccepted/In press - 2021

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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