2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu; K. Ueda; H. Ye; Y. Yamauchi; S. Sasaki; T. Makimoto

doi:10.1049/el:20053194

2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu^*, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

113 被引用数 (Scopus)

抄録

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

本文言語	English
ページ（範囲）	1249-1250
ページ数	2
ジャーナル	Electronics Letters
巻	41
号	22
DOI	https://doi.org/10.1049/el:20053194
出版ステータス	Published - 2005 12 1
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:20053194

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@article{92cbaf0e804444718ab8ce346e67aae9,

title = "2 W/mm output power density at 1 GHz for diamond FETs",

abstract = "Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.",

author = "M. Kasu and K. Ueda and H. Ye and Y. Yamauchi and S. Sasaki and T. Makimoto",

year = "2005",

month = dec,

day = "1",

doi = "10.1049/el:20053194",

language = "English",

volume = "41",

pages = "1249--1250",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "22",

}

TY - JOUR

T1 - 2 W/mm output power density at 1 GHz for diamond FETs

AU - Kasu, M.

AU - Ueda, K.

AU - Ye, H.

AU - Yamauchi, Y.

AU - Sasaki, S.

AU - Makimoto, T.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

AB - Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

UR - http://www.scopus.com/inward/record.url?scp=33645142318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645142318&partnerID=8YFLogxK

U2 - 10.1049/el:20053194

DO - 10.1049/el:20053194

M3 - Article

AN - SCOPUS:33645142318

VL - 41

SP - 1249

EP - 1250

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 22

ER -

2 W/mm output power density at 1 GHz for diamond FETs

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