抄録
Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.
本文言語 | English |
---|---|
ページ(範囲) | 1249-1250 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 41 |
号 | 22 |
DOI | |
出版ステータス | Published - 2005 12月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学