(211)-oriented domain formation during growth of ZnTe on m-plane sapphire by MBE

Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

研究成果: Article

7 引用 (Scopus)

抜粋

ZnTe epilayers have been grown on 2°-tilted m-plane 10 1 ̄ 0 sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and 30 3 ̄ 0 sapphire were measured. Computer simulation was used to analyze the symmetry of the diffraction patterns seen in the pole figure images. Stereographic projections were also compared with the pole figures of 422 and 211 ZnTe, confirming that single-domain (211)-oriented ZnTe epilayers had been grown on the 2°-tilted m-plane sapphire substrates. Although differences in crystal structure and lattice mismatch were severe in these heterostructures, precise control of the substrate surface's lattice arrangement would result in the formation of high-quality epitaxial layers.

元の言語English
ページ(範囲)921-925
ページ数5
ジャーナルJournal of Electronic Materials
43
発行部数4
DOI
出版物ステータスPublished - 2014 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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