(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu*, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

本文言語English
ページ(範囲)1381-1384
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
10
11
DOI
出版ステータスPublished - 2013 11 1

ASJC Scopus subject areas

  • 凝縮系物理学

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