25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS

Tsuyoshi Sugiura, Toshihiko Yoshimasu

研究成果: Conference contribution

抄録

This paper presents a 2S-GHz-band high-efficiency power amplifier (P A) with a novel adaptively controlled gate capacitor circuit for 5th generation (5G) mobile terminal application in the 45-nm silicon on insulator (SOI) CMOS process. This novel gate capacitor circuit effectively controls the RF swing of each stacked FET to achieve high efficiency in the several-dB back-off region. The PA adopts a 4 stacked FET structure to increase the output power because of the low breakdown voltage issue of scaled MOS FETs. An adaptive bias circuit is employed for high linearity and high back-off efficiency. At a supply voltage of 4 V, the fabricated P A exhibited a saturated output power of 21.5 dBm, a peak power added efficiency (P AE) of 40.9%, a gain of 17.6 dB, and an ITRS FoM of 83.2 dB. The effective P A area was 0.55 mm by 0.4 mm.

本文言語English
ホスト出版物のタイトル2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
出版社Institute of Electrical and Electronics Engineers Inc.
ページ26-28
ページ数3
ISBN(電子版)9781665434720
DOI
出版ステータスPublished - 2022
イベント2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022 - Las Vegas, United States
継続期間: 2022 1月 162022 1月 19

出版物シリーズ

名前2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022

Conference

Conference2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
国/地域United States
CityLas Vegas
Period22/1/1622/1/19

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 電子材料、光学材料、および磁性材料
  • 器械工学

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