In this paper, we describe a low-power millimeter-wave amplitude-shift- keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm 2. The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.