300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama; S. Amakawa; K. Takano; M. Fujishima

doi:10.1109/MWSYM.2015.7167118

300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama, S. Amakawa, K. Takano, M. Fujishima

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

本文言語	English
ホスト出版物のタイトル	2015 IEEE MTT-S International Microwave Symposium, IMS 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781479982752
DOI	https://doi.org/10.1109/MWSYM.2015.7167118
出版ステータス	Published - 2015 7月 24
外部発表	はい
イベント	IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States 継続期間: 2015 5月 17 → 2015 5月 22

Other

Other	IEEE MTT-S International Microwave Symposium, IMS 2015
国/地域	United States
City	Phoenix
Period	15/5/17 → 15/5/22

ASJC Scopus subject areas

コンピュータネットワークおよび通信
信号処理
電子工学および電気工学

文献へのアクセス

10.1109/MWSYM.2015.7167118

他のファイルとリンク

引用スタイル

Katayama, K, Amakawa, S, Takano, K & Fujishima, M 2015, 300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique. in 2015 IEEE MTT-S International Microwave Symposium, IMS 2015., 7167118, Institute of Electrical and Electronics Engineers Inc., IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 15/5/17. https://doi.org/10.1109/MWSYM.2015.7167118

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