抄録
This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
本文言語 | English |
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ホスト出版物のタイトル | 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ISBN(電子版) | 9781479982752 |
DOI | |
出版ステータス | Published - 2015 7月 24 |
外部発表 | はい |
イベント | IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States 継続期間: 2015 5月 17 → 2015 5月 22 |
Other
Other | IEEE MTT-S International Microwave Symposium, IMS 2015 |
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国/地域 | United States |
City | Phoenix |
Period | 15/5/17 → 15/5/22 |
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信
- 信号処理
- 電子工学および電気工学