300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

Kosuke Katayama, S. Amakawa, K. Takano, M. Fujishima

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.

本文言語English
ホスト出版物のタイトル2015 IEEE MTT-S International Microwave Symposium, IMS 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479982752
DOI
出版ステータスPublished - 2015 7 24
外部発表はい
イベントIEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
継続期間: 2015 5 172015 5 22

Other

OtherIEEE MTT-S International Microwave Symposium, IMS 2015
国/地域United States
CityPhoenix
Period15/5/1715/5/22

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 信号処理
  • 電子工学および電気工学

引用スタイル