抄録
This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| ISBN（電子版） | 9781479982752 |
| DOI | |
| 出版物ステータス | Published - 2015 7 24 |
| 外部発表 | Yes |
| イベント | IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States 継続期間: 2015 5 17 → 2015 5 22 |
Other
| Other | IEEE MTT-S International Microwave Symposium, IMS 2015 |
|---|---|
| 国 | United States |
| 市 | Phoenix |
| 期間 | 15/5/17 → 15/5/22 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Signal Processing
- Electrical and Electronic Engineering
これを引用
300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique. / Katayama, Kosuke; Amakawa, S.; Takano, K.; Fujishima, M.
2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7167118.研究成果: Conference contribution
}
TY - GEN
T1 - 300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique
AU - Katayama, Kosuke
AU - Amakawa, S.
AU - Takano, K.
AU - Fujishima, M.
PY - 2015/7/24
Y1 - 2015/7/24
N2 - This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
AB - This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.
KW - J-band
KW - millimeter-wave
KW - modeling
KW - MOSFET
UR - http://www.scopus.com/inward/record.url?scp=84946019025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946019025&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2015.7167118
DO - 10.1109/MWSYM.2015.7167118
M3 - Conference contribution
AN - SCOPUS:84946019025
BT - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -