300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator

Yu Fu, Yu Hao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Conference contribution

抄録

In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.

本文言語English
ホスト出版物のタイトル2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
出版社Institute of Electrical and Electronics Engineers Inc.
ページ121-124
ページ数4
ISBN(電子版)9781665422017
DOI
出版ステータスPublished - 2022
イベント34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
継続期間: 2022 5月 222022 5月 25

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2022-May
ISSN(印刷版)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
国/地域Canada
CityVancouver
Period22/5/2222/5/25

ASJC Scopus subject areas

  • 工学(全般)

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