抄録
This paper reports the small-signal and large-signal performances at high drain voltage (V DS) ranging up to 60 V for a 0.5 μ m gate length two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with a 100-nm-thick atomic-layer-deposited (ALD) Al2 O3 film on a IIa-type polycrystalline diamond substrate with a (110) preferential surface. This diamond FET demonstrated a cutoff frequency (f T) of 31 GHz, indicating that its carrier velocity was reaching 1.0 ×10 7 cm/s for the first time in diamond. In addition, a f T of 24 GHz was obtained at V DS = −60V, thus giving a f T × V DS product of 1.44 THz V. This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at V DS = −50V using a load-pull system at 1GHz.
| 元の言語 | English |
|---|---|
| ジャーナル | IEEE Electron Device Letters |
| DOI | |
| 出版物ステータス | Accepted/In press - 2018 1 1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
これを引用
3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity. / Imanishi, Shoichiro; Horikawa, Kiyotaka; Oi, Nobutaka; Okubo, Satoshi; Kageura, Taisuke; Hiraiwa, Atsushi; Kawarada, Hiroshi.
：: IEEE Electron Device Letters, 01.01.2018.研究成果: Article
}
TY - JOUR
T1 - 3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity
AU - Imanishi, Shoichiro
AU - Horikawa, Kiyotaka
AU - Oi, Nobutaka
AU - Okubo, Satoshi
AU - Kageura, Taisuke
AU - Hiraiwa, Atsushi
AU - Kawarada, Hiroshi
PY - 2018/1/1
Y1 - 2018/1/1
N2 - This paper reports the small-signal and large-signal performances at high drain voltage (V DS) ranging up to 60 V for a 0.5 μ m gate length two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with a 100-nm-thick atomic-layer-deposited (ALD) Al2 O3 film on a IIa-type polycrystalline diamond substrate with a (110) preferential surface. This diamond FET demonstrated a cutoff frequency (f T) of 31 GHz, indicating that its carrier velocity was reaching 1.0 ×10 7 cm/s for the first time in diamond. In addition, a f T of 24 GHz was obtained at V DS = −60V, thus giving a f T × V DS product of 1.44 THz V. This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at V DS = −50V using a load-pull system at 1GHz.
AB - This paper reports the small-signal and large-signal performances at high drain voltage (V DS) ranging up to 60 V for a 0.5 μ m gate length two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with a 100-nm-thick atomic-layer-deposited (ALD) Al2 O3 film on a IIa-type polycrystalline diamond substrate with a (110) preferential surface. This diamond FET demonstrated a cutoff frequency (f T) of 31 GHz, indicating that its carrier velocity was reaching 1.0 ×10 7 cm/s for the first time in diamond. In addition, a f T of 24 GHz was obtained at V DS = −60V, thus giving a f T × V DS product of 1.44 THz V. This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at V DS = −50V using a load-pull system at 1GHz.
KW - Diamond
KW - high frequency
KW - high voltage
KW - MOSFET
KW - output power
UR - http://www.scopus.com/inward/record.url?scp=85058627999&partnerID=8YFLogxK
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U2 - 10.1109/LED.2018.2886596
DO - 10.1109/LED.2018.2886596
M3 - Article
AN - SCOPUS:85058627999
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
ER -