@article{0ecef491ee034753aa0e182050e81d96,
title = "3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity",
abstract = "This letter reports the small-signal and large-signal performances at high drain voltage (VDS) ranging up to 60 V for a 0.5 μ m gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor with a 100-nm-thick atomic-layer-deposited Al2O3 film on a IIa-type polycrystalline diamond substrate with (110) preferential surfaces. This diamond FET demonstrated a cutoff frequency (fT) of 31 GHz, indicating that its carrier velocity was reaching 1.0× 107 cm/s for the first time in diamond. In addition, a fT of 24 GHz was obtained at VDS=-60 V, thus giving a f T× VDS product of 1.44 THz · V. This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at VDS=-50 V using a load-pull system at 1 GHz.",
keywords = "Diamond, MOSFET, high frequency, high voltage, output power",
author = "Shoichiro Imanishi and Kiyotaka Horikawa and Nobutaka Oi and Satoshi Okubo and Taisuke Kageura and Atsushi Hiraiwa and Hiroshi Kawarada",
note = "Funding Information: Manuscript received October 23, 2018; revised November 29, 2018; accepted December 9, 2018. Date of publication December 13, 2018; date of current version January 31, 2019. This work was supported in part by JSPS Grant-in-Aid for Scientific Research(S) under Grant JP26220903 and in part by the Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development. The review of this letter was arranged by Editor G. H. Jessen. (Corresponding author: Hiroshi Kawarada.) The authors are with the Faculty of Science and Engineering, with the Institute of Nano-Science and Nano-Engineering, and also with the Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Japan (e-mail: kawarada@waseda.jp). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2019",
month = feb,
doi = "10.1109/LED.2018.2886596",
language = "English",
volume = "40",
pages = "279--282",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}