40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

元の言語English
ホスト出版物のタイトルConference Digest - IEEE International Semiconductor Laser Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ30-31
ページ数2
ISBN(電子版)9781479957217
DOI
出版物ステータスPublished - 2014 12 16
外部発表Yes
イベント2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain
継続期間: 2014 9 72014 9 10

出版物シリーズ

名前Conference Digest - IEEE International Semiconductor Laser Conference
ISSN(印刷物)0899-9406

Other

Other2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Spain
Palma de Mallorca
期間14/9/714/9/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • これを引用

    Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014). 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. : Conference Digest - IEEE International Semiconductor Laser Conference (pp. 30-31). [6987435] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.148