46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

研究成果: Article

17 引用 (Scopus)

抜粋

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

元の言語English
ページ(範囲)1150-1152
ページ数3
ジャーナルIEEE Photonics Technology Letters
10
発行部数8
DOI
出版物ステータスPublished - 1998 8 1
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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