46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata*, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

本文言語English
ページ(範囲)1150-1152
ページ数3
ジャーナルIEEE Photonics Technology Letters
10
8
DOI
出版ステータスPublished - 1998 8 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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