5-GHz Band highly linear VCO IC with a novel resonant circuit

Satoshi Kurachi*, Toshihiko Yoshimasu, Nobuyuki Itoh, Koji Yonemura

*この研究の対応する著者

研究成果: Conference contribution

25 被引用数 (Scopus)

抄録

This paper presents a 0.35-μm SiGe BiCMOS VCO IC exhibiting a linear VCO gain (Kvco) for 5-GHz band application. To realize a linear Kvco, a novel resonant circuit is proposed. The measured Kvco changes from 224 MHz/V to 341 MHz/V The ratio of the maximum Kvco to the minimum one is 1.5 which is less than one-half of that of a conventional VCO. The VCO oscillation frequency range is from 5.45 GHz to 5.95 GHz, the tuning range is 8.8 %, and the dc current consumption is 3.4 mA at a supply voltage of 3.0 V. The measured phase noise is -116 dBc/Hz at IMHz offset, which is similar to the conventional VCO.

本文言語English
ホスト出版物のタイトル2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
ページ285-288
ページ数4
DOI
出版ステータスPublished - 2007 8 2
イベント2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
継続期間: 2007 1 102007 1 12

出版物シリーズ

名前2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
国/地域United States
CityLong Beach, CA
Period07/1/1007/1/12

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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