TY - GEN
T1 - 5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications
AU - Uchida, Yorikatsu
AU - He, Shihai
AU - Yang, Xin
AU - Liu, Qing
AU - Yoshimasu, Toshihiko
PY - 2012/12/1
Y1 - 2012/12/1
N2 - In this paper, novel linearization technique is proposed to realize a 5-GHz band linear CMOS power amplifier IC for WLAN application. The novel linearizer which consists of a diode-connected PMOS bias circuit and a PMOS varactor connected in parallel with an NMOS amplifier is effectively to suppress the gain compression and phase distortion of the power amplifier. A CMOS power amplifier IC is designed, fabricated and fully tested using TSMC 0.13-μπι CMOS technology. With these proposed techniques, the measurement results show a third-order IMD improvement of 9 dB over wide output power range and the maximum improvement of 18 dB. The power amplifier IC exhibits an output PldB of 19.5 dBm and a power gain of 9.5 dB at an operation voltage of 3.3 V.
AB - In this paper, novel linearization technique is proposed to realize a 5-GHz band linear CMOS power amplifier IC for WLAN application. The novel linearizer which consists of a diode-connected PMOS bias circuit and a PMOS varactor connected in parallel with an NMOS amplifier is effectively to suppress the gain compression and phase distortion of the power amplifier. A CMOS power amplifier IC is designed, fabricated and fully tested using TSMC 0.13-μπι CMOS technology. With these proposed techniques, the measurement results show a third-order IMD improvement of 9 dB over wide output power range and the maximum improvement of 18 dB. The power amplifier IC exhibits an output PldB of 19.5 dBm and a power gain of 9.5 dB at an operation voltage of 3.3 V.
UR - http://www.scopus.com/inward/record.url?scp=84873129329&partnerID=8YFLogxK
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U2 - 10.1109/RFIT.2012.6401673
DO - 10.1109/RFIT.2012.6401673
M3 - Conference contribution
AN - SCOPUS:84873129329
SN - 9781467323048
T3 - Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
SP - 240
EP - 242
BT - Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
T2 - 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
Y2 - 21 November 2012 through 23 November 2012
ER -