5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications

Yorikatsu Uchida, Shihai He, Xin Yang, Qing Liu, Toshihiko Yoshimasu

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

In this paper, novel linearization technique is proposed to realize a 5-GHz band linear CMOS power amplifier IC for WLAN application. The novel linearizer which consists of a diode-connected PMOS bias circuit and a PMOS varactor connected in parallel with an NMOS amplifier is effectively to suppress the gain compression and phase distortion of the power amplifier. A CMOS power amplifier IC is designed, fabricated and fully tested using TSMC 0.13-μπι CMOS technology. With these proposed techniques, the measurement results show a third-order IMD improvement of 9 dB over wide output power range and the maximum improvement of 18 dB. The power amplifier IC exhibits an output PldB of 19.5 dBm and a power gain of 9.5 dB at an operation voltage of 3.3 V.

本文言語English
ホスト出版物のタイトルProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
ページ240-242
ページ数3
DOI
出版ステータスPublished - 2012 12 1
イベント2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 - Singapore, Singapore
継続期間: 2012 11 212012 11 23

出版物シリーズ

名前Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012

Conference

Conference2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
CountrySingapore
CitySingapore
Period12/11/2112/11/23

ASJC Scopus subject areas

  • Computer Networks and Communications

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