5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2014
ホスト出版物のサブタイトル"Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ428-431
ページ数4
ISBN(電子版)9782874870361
DOI
出版ステータスPublished - 2014 12 23
イベント9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy
継続期間: 2014 10 62014 10 7

出版物シリーズ

名前European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference

Conference

Conference9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
CountryItaly
CityRome
Period14/10/614/10/7

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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