5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

研究成果: Conference contribution

抜粋

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

元の言語English
ホスト出版物のタイトルEuropean Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1372-1375
ページ数4
ISBN(印刷物)9782874870354
DOI
出版物ステータスPublished - 2014 12 15
イベント2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy
継続期間: 2014 10 62014 10 9

Other

Other2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Italy
Rome
期間14/10/614/10/9

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Yang, X., Sugiura, T., Otani, N., Murakami, T., Otobe, E., & Yoshimasu, T. (2014). 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. : European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference (pp. 1372-1375). [6986700] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2014.6986700