5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

本文言語English
ホスト出版物のタイトルEuropean Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1372-1375
ページ数4
ISBN(印刷版)9782874870354
DOI
出版ステータスPublished - 2014 12 15
イベント2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy
継続期間: 2014 10 62014 10 9

Other

Other2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
国/地域Italy
CityRome
Period14/10/614/10/9

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル