50 μm fine pitch ball bonding technology

Tomohiro Uno, Osamu Kitamura, Shinichi Terashima, Kohei Tatsumi

研究成果: Article

2 引用 (Scopus)

抜粋

Importance of fine pitch bonding technology for high-density assembly of semi-conductor devices is increasing in the background of rapidly advancing downsizing and performance enhancement of the devices. Presently, the wire bonding method is dominant as a method of electric interconnection between pad electrodes on Si chip and external electrodes, wherein demands are increasing for connection in narrower pitches between adjacent wires. 70 μm-pitch bonding has been applied to mass-produced devices and 40 μm-pitch bonding is expected to come to commercial use by 2005. This paper describes technology developments of 50 μm-pitch bonding involving high strength thin bonding wire, optimum relationship between the capillary shape and ball diameter, optimization of bonding conditions, etc.

元の言語English
ページ(範囲)24-29
ページ数6
ジャーナルNippon Steel Technical Report
発行部数84
出版物ステータスPublished - 2001 7 1

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ASJC Scopus subject areas

  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

これを引用

Uno, T., Kitamura, O., Terashima, S., & Tatsumi, K. (2001). 50 μm fine pitch ball bonding technology. Nippon Steel Technical Report, (84), 24-29.