5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Shihai He, Yorikatsu Uchida, Xin Yang, Qing Liu, Toshihiko Yoshimasu

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

元の言語English
ホスト出版物のタイトル2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
ページ1912-1915
ページ数4
DOI
出版物ステータスPublished - 2012 8 10
イベント2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen, China
継続期間: 2012 5 52012 5 8

出版物シリーズ

名前2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
5

Conference

Conference2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
China
Shenzhen
期間12/5/512/5/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    He, S., Uchida, Y., Yang, X., Liu, Q., & Yoshimasu, T. (2012). 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. : 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings (pp. 1912-1915). [6230444] (2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings; 巻数 5). https://doi.org/10.1109/ICMMT.2012.6230444