抄録
A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1639-1640 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 35 |
| 号 | 19 |
| DOI | |
| 出版ステータス | Published - 1999 9月 16 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学