52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

K. Takahata; Y. Muramoto; H. Fukano; Y. Matsuoka

doi:10.1049/el:19991118

52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

K. Takahata, Y. Muramoto, H. Fukano, Y. Matsuoka

研究成果: Article

16 被引用数 (Scopus)

抄録

A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

本文言語	English
ページ（範囲）	1639-1640
ページ数	2
ジャーナル	Electronics Letters
巻	35
号	19
DOI	https://doi.org/10.1049/el:19991118
出版ステータス	Published - 1999 9 16
外部発表	はい

ASJC Scopus subject areas

Electrical and Electronic Engineering

文献へのアクセス

10.1049/el:19991118

フィンガープリント「52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{a2110db09ab644c8961d1da32436aed0,

title = "52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W",

abstract = "A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.",

author = "K. Takahata and Y. Muramoto and H. Fukano and Y. Matsuoka",

year = "1999",

month = sep,

day = "16",

doi = "10.1049/el:19991118",

language = "English",

volume = "35",

pages = "1639--1640",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "19",

}

TY - JOUR

T1 - 52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

AU - Takahata, K.

AU - Muramoto, Y.

AU - Fukano, H.

AU - Matsuoka, Y.

PY - 1999/9/16

Y1 - 1999/9/16

N2 - A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

AB - A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

UR - http://www.scopus.com/inward/record.url?scp=0032644864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032644864&partnerID=8YFLogxK

U2 - 10.1049/el:19991118

DO - 10.1049/el:19991118

M3 - Article

AN - SCOPUS:0032644864

VL - 35

SP - 1639

EP - 1640

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -