52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

K. Takahata; Y. Muramoto; H. Fukano; Y. Matsuoka

doi:10.1049/el:19991118

52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

K. Takahata, Y. Muramoto, H. Fukano, Y. Matsuoka

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

本文言語	English
ページ（範囲）	1639-1640
ページ数	2
ジャーナル	Electronics Letters
巻	35
号	19
DOI	https://doi.org/10.1049/el:19991118
出版ステータス	Published - 1999 9 16
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19991118

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AB - A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

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52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

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