79 GHz CMOS power amplifier considering time- and temperature-degradation model

Takeshi Yoshida, Kyoya Takano, Chen Yang Li, Kosuke Katayama, Shuhei Amakawa, Minoru Fujishima

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper reports a CMOS power amplifier (PA) designed considering the performance degradation of MOSFETs caused by both temperature variations and the hot-carrier effect. A small-signal MOSFET model that reproduces the transient degradation caused by the hot-carrier effect is proposed. A 79 GHz CMOS PA was designed utilizing the proposed small-signal model. Simulation results agreed well with the measurement results of the PA fabricated with a 40 nm CMOS technology. It achieved the small-signal gain variations of below 0.7 dB and the OP1dB degradation of less than 0.8 dB in the temperature range of 0°C to 100°C.

本文言語English
ホスト出版物のタイトル2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ637-639
ページ数3
ISBN(電子版)9784902339314
出版ステータスPublished - 2014 3 25
外部発表はい
イベント2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
継続期間: 2014 11 42014 11 7

出版物シリーズ

名前2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Other

Other2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period14/11/414/11/7

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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