80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Xin Yang, Xiao Xu, Takayuki Shibata, Toshihiko Yoshimasu

研究成果: Article

抄録

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

元の言語English
ページ(範囲)1-10
ページ数10
ジャーナルInternational Journal of Microwave and Wireless Technologies
DOI
出版物ステータスAccepted/In press - 2016 3 28

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BiCMOS technology
Transistors
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

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title = "80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS",
abstract = "In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.",
keywords = "130-nm SiGe BiCMOS, Bottom-LO-configuratoin, CECCTP, Low power, Marchand Balun, Sub-harmonic mixer, W-band",
author = "Xin Yang and Xiao Xu and Takayuki Shibata and Toshihiko Yoshimasu",
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T1 - 80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

AU - Yang, Xin

AU - Xu, Xiao

AU - Shibata, Takayuki

AU - Yoshimasu, Toshihiko

PY - 2016/3/28

Y1 - 2016/3/28

N2 - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

AB - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

KW - 130-nm SiGe BiCMOS

KW - Bottom-LO-configuratoin

KW - CECCTP

KW - Low power

KW - Marchand Balun

KW - Sub-harmonic mixer

KW - W-band

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JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

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