80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Xin Yang, Xiao Xu, Takayuki Shibata, Toshihiko Yoshimasu*

*この研究の対応する著者

研究成果: Article査読

抄録

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

本文言語English
ページ(範囲)1-10
ページ数10
ジャーナルInternational Journal of Microwave and Wireless Technologies
DOI
出版ステータスAccepted/In press - 2016 3 28

ASJC Scopus subject areas

  • 電子工学および電気工学

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