抄録
In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1-10 |
| ページ数 | 10 |
| ジャーナル | International Journal of Microwave and Wireless Technologies |
| DOI | |
| 出版物ステータス | Accepted/In press - 2016 3 28 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS. / Yang, Xin; Xu, Xiao; Shibata, Takayuki; Yoshimasu, Toshihiko.
：: International Journal of Microwave and Wireless Technologies, 28.03.2016, p. 1-10.研究成果: Article
}
TY - JOUR
T1 - 80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS
AU - Yang, Xin
AU - Xu, Xiao
AU - Shibata, Takayuki
AU - Yoshimasu, Toshihiko
PY - 2016/3/28
Y1 - 2016/3/28
N2 - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.
AB - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.
KW - 130-nm SiGe BiCMOS
KW - Bottom-LO-configuratoin
KW - CECCTP
KW - Low power
KW - Marchand Balun
KW - Sub-harmonic mixer
KW - W-band
UR - http://www.scopus.com/inward/record.url?scp=84961964210&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961964210&partnerID=8YFLogxK
U2 - 10.1017/S1759078716000337
DO - 10.1017/S1759078716000337
M3 - Article
AN - SCOPUS:84961964210
SP - 1
EP - 10
JO - International Journal of Microwave and Wireless Technologies
JF - International Journal of Microwave and Wireless Technologies
SN - 1759-0787
ER -