抄録
We demonstrate high baud-rate DQPSK modulation with full-ETDM technique using a novel high-speed optical IQ modulator consisting of a ridge-type optical waveguide structure on a thin LiNbO3 substrate. Our fabrication technique achieves a drastic extension of the modulator's bandwidth and a reduction of half-wave voltage. Demonstration of 90-Gbaud NRZ-DP-DQPSK signal generation with the modulator successfully achieved a bit rate of 360-Gb/s under full-ETDM configuration.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1179-1186 |
| ページ数 | 8 |
| ジャーナル | IEICE Transactions on Electronics |
| 巻 | E94-C |
| 発行部数 | 7 |
| DOI | |
| 出版物ステータス | Published - 2011 7 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
これを引用
90 Gbaud NRZ-DP-DQPSK modulation with full-ETDM technique using high-speed optical IQ modulator. / Kanno, Atsushi; Sakamoto, Takahide; Chiba, Akito; Sudo, Masaaki; Higuma, Kaoru; Ichikawa, Junichiro; Kawanishi, Tetsuya.
：: IEICE Transactions on Electronics, 巻 E94-C, 番号 7, 07.2011, p. 1179-1186.研究成果: Article
}
TY - JOUR
T1 - 90 Gbaud NRZ-DP-DQPSK modulation with full-ETDM technique using high-speed optical IQ modulator
AU - Kanno, Atsushi
AU - Sakamoto, Takahide
AU - Chiba, Akito
AU - Sudo, Masaaki
AU - Higuma, Kaoru
AU - Ichikawa, Junichiro
AU - Kawanishi, Tetsuya
PY - 2011/7
Y1 - 2011/7
N2 - We demonstrate high baud-rate DQPSK modulation with full-ETDM technique using a novel high-speed optical IQ modulator consisting of a ridge-type optical waveguide structure on a thin LiNbO3 substrate. Our fabrication technique achieves a drastic extension of the modulator's bandwidth and a reduction of half-wave voltage. Demonstration of 90-Gbaud NRZ-DP-DQPSK signal generation with the modulator successfully achieved a bit rate of 360-Gb/s under full-ETDM configuration.
AB - We demonstrate high baud-rate DQPSK modulation with full-ETDM technique using a novel high-speed optical IQ modulator consisting of a ridge-type optical waveguide structure on a thin LiNbO3 substrate. Our fabrication technique achieves a drastic extension of the modulator's bandwidth and a reduction of half-wave voltage. Demonstration of 90-Gbaud NRZ-DP-DQPSK signal generation with the modulator successfully achieved a bit rate of 360-Gb/s under full-ETDM configuration.
KW - Electrically time-division multiplexing
KW - Optical IQ modulator
KW - Quadrature phase shift keying
KW - Ti:LiNbO optical modulator
UR - http://www.scopus.com/inward/record.url?scp=79959974120&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959974120&partnerID=8YFLogxK
U2 - 10.1587/transele.E94.C.1179
DO - 10.1587/transele.E94.C.1179
M3 - Article
VL - E94-C
SP - 1179
EP - 1186
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 7
ER -