A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

Zheng Sun*, Xiao Xu, Xin Yang, Takayuki Shibata, Toshihiko Yoshimasu

*この研究の対応する著者

研究成果: Conference contribution

抄録

A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

本文言語English
ホスト出版物のタイトルRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
ホスト出版物のサブタイトルSilicon Technology Heats Up for THz
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479955039
DOI
出版ステータスPublished - 2014 10 21
イベント2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
継続期間: 2014 8 272014 8 30

出版物シリーズ

名前RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
国/地域China
CityHefei
Period14/8/2714/8/30

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

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