A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.

元の言語English
ホスト出版物のタイトルEuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ182-185
ページ数4
ISBN(電子版)9782874870521
DOI
出版物ステータスPublished - 2018 11 16
イベント13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain
継続期間: 2018 9 242018 9 25

Other

Other13th European Microwave Integrated Circuits Conference, EuMIC 2018
Spain
Madrid
期間18/9/2418/9/25

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

フィンガープリント A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Chen, C., Sugiura, T., & Yoshimasu, T. (2018). A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. : EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference (pp. 182-185). [8539942] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EuMIC.2018.8539942