A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

研究成果: Article

抜粋

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

元の言語English
ページ(範囲)878-881
ページ数4
ジャーナルIEICE Transactions on Electronics
E98C
発行部数8
DOI
出版物ステータスPublished - 2015 8 1
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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