A-197.3-dBc/Hz FoMTWideband LC-VCO IC with a Single Voltage-Controlled IMOS-Based Novel Varactor in 40-nm CMOS SOI

Mengchu Fang; Toshihiko Yoshimasu

doi:10.1109/TMTT.2020.2990441

A-197.3-dBc/Hz FoM_TWideband LC-VCO IC with a Single Voltage-Controlled IMOS-Based Novel Varactor in 40-nm CMOS SOI

Mengchu Fang, Toshihiko Yoshimasu^*

^*この研究の対応する著者

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

A wideband LC-VCO IC with an Inversion-MOS (IMOS)-based novel varactor is proposed in this article. The novel varactor that consists of an IMOS and a fixed metal-insulator-metal (MIM) capacitor is able to provide a continuous tuning range with a single analog control voltage. The proposed VCO IC is designed, fabricated, and fully evaluated on the wafer in 40-nm CMOS SOI. The proposed wideband VCO IC has exhibited a tuning range of 40.3% from 4.14 to 6.23 GHz and a measured FoMT of-197.3 dBc/Hz under a supply voltage of only 0.34 V.

本文言語	English
論文番号	9091010
ページ（範囲）	4116-4121
ページ数	6
ジャーナル	IEEE Transactions on Microwave Theory and Techniques
巻	68
号	10
DOI	https://doi.org/10.1109/TMTT.2020.2990441
出版ステータス	Published - 2020 10月

ASJC Scopus subject areas

放射線
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1109/TMTT.2020.2990441

他のファイルとリンク

引用スタイル

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abstract = "A wideband LC-VCO IC with an Inversion-MOS (IMOS)-based novel varactor is proposed in this article. The novel varactor that consists of an IMOS and a fixed metal-insulator-metal (MIM) capacitor is able to provide a continuous tuning range with a single analog control voltage. The proposed VCO IC is designed, fabricated, and fully evaluated on the wafer in 40-nm CMOS SOI. The proposed wideband VCO IC has exhibited a tuning range of 40.3% from 4.14 to 6.23 GHz and a measured FoMT of-197.3 dBc/Hz under a supply voltage of only 0.34 V.",

keywords = "CMOS SOI, IMOS, LC-VCO, RFIC, varactor, wideband",

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