A-197.3 dBc/Hz FoMT wideband LC-VCO IC with an I-MOS based novel varactor in 40-nm SOI CMOS

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

This paper presents a wideband excellent FoMT LC-VCO IC with a novel varactor controlled by a single tuning voltage. The novel varactor includes an Inversion-MOS (IMOS) and an MIM capacitor to widen the capacitance variation. The proposed wideband VCO IC is designed, fabricated and fully evaluated on wafer in 40-nm SOI CMOS. The proposed VCO IC has a completely continuous frequency tuning range from 4.14 GHz to 6.23 GHz (40.3 %) and a-131.0-dBc/Hz measured phase noise at 10-MHz offset frequency from the oscillation frequency of 4.14 GHz. Moreover, the VCO IC has exhibited a measured FoMT of-197.3 dBc/Hz under a 0.34-V supply voltage.

本文言語English
ホスト出版物のタイトルProceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ783-785
ページ数3
ISBN(電子版)9781728135175
DOI
出版ステータスPublished - 2019 12
イベント2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
継続期間: 2019 12 102019 12 13

出版物シリーズ

名前Asia-Pacific Microwave Conference Proceedings, APMC
2019-December

Conference

Conference2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
国/地域Singapore
CitySingapore
Period19/12/1019/12/13

ASJC Scopus subject areas

  • 電子工学および電気工学

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