A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

Cuilin Chen, Xiao Xu, Xin Yang, Tsuyoshi Sugiura, Toshihiko Yoshimasu

研究成果: Conference contribution

8 引用 (Scopus)

抜粋

A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.

元の言語English
ホスト出版物のタイトルSiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
出版者Institute of Electrical and Electronics Engineers Inc.
ページ88-90
ページ数3
ISBN(電子版)9781509052363
DOI
出版物ステータスPublished - 2017 3 8
イベント17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 - Phoenix, United States
継続期間: 2017 1 152017 1 18

Other

Other17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017
United States
Phoenix
期間17/1/1517/1/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Computer Networks and Communications

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  • これを引用

    Chen, C., Xu, X., Yang, X., Sugiura, T., & Yoshimasu, T. (2017). A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. : SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 88-90). [7874379] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2017.7874379