A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

Taufiq Alif Kurniawan, Xin Yang, Zheng Sun, Xiao Xu, Toshihiko Yoshimasu

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.

元の言語English
ホスト出版物のタイトル2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
出版者Institute of Electrical and Electronics Engineers Inc.
ページ744-746
ページ数3
ISBN(電子版)9784902339314
出版物ステータスPublished - 2014 3 25
イベント2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
継続期間: 2014 11 42014 11 7

Other

Other2014 Asia-Pacific Microwave Conference, APMC 2014
Japan
Sendai
期間14/11/414/11/7

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Kurniawan, T. A., Yang, X., Sun, Z., Xu, X., & Yoshimasu, T. (2014). A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. : 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 744-746). [7067771] Institute of Electrical and Electronics Engineers Inc..