A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Nobuyuki Itoh, Toshihiko Yoshimasu

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

元の言語English
ホスト出版物のタイトル2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷物)9781479975211
DOI
出版物ステータスPublished - 2015 6 9
イベント2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States
継続期間: 2015 4 132015 4 15

Other

Other2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
United States
Cocoa Beach
期間15/4/1315/4/15

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Kurniawan, T. A., Yang, X., Xu, X., Itoh, N., & Yoshimasu, T. (2015). A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. : 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 [7120389] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WAMICON.2015.7120389