A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Nobuyuki Itoh, Toshihiko Yoshimasu

研究成果: Conference contribution

1 引用 (Scopus)

抄録

In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

元の言語English
ホスト出版物のタイトル2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷物)9781479975211
DOI
出版物ステータスPublished - 2015 6 9
イベント2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States
継続期間: 2015 4 132015 4 15

Other

Other2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
United States
Cocoa Beach
期間15/4/1315/4/15

Fingerprint

Power amplifiers
Electric potential
Drain current
Threshold voltage
Transistors
Electric power utilization

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

これを引用

Kurniawan, T. A., Yang, X., Xu, X., Itoh, N., & Yoshimasu, T. (2015). A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. : 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 [7120389] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WAMICON.2015.7120389

A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao; Itoh, Nobuyuki; Yoshimasu, Toshihiko.

2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7120389.

研究成果: Conference contribution

Kurniawan, TA, Yang, X, Xu, X, Itoh, N & Yoshimasu, T 2015, A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. : 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015., 7120389, Institute of Electrical and Electronics Engineers Inc., 2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015, Cocoa Beach, United States, 15/4/13. https://doi.org/10.1109/WAMICON.2015.7120389
Kurniawan TA, Yang X, Xu X, Itoh N, Yoshimasu T. A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. : 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7120389 https://doi.org/10.1109/WAMICON.2015.7120389
Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao ; Itoh, Nobuyuki ; Yoshimasu, Toshihiko. / A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS. 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{46633bc3412d43b28b648fcef7532d20,
title = "A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS",
abstract = "In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 {\%} at a supply voltage of only 0.75-V.",
keywords = "Back-gate voltage, High efficiency, Low supply voltage, Third harmonic termination",
author = "Kurniawan, {Taufiq Alif} and Xin Yang and Xiao Xu and Nobuyuki Itoh and Toshihiko Yoshimasu",
year = "2015",
month = "6",
day = "9",
doi = "10.1109/WAMICON.2015.7120389",
language = "English",
isbn = "9781479975211",
booktitle = "2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

AU - Kurniawan, Taufiq Alif

AU - Yang, Xin

AU - Xu, Xiao

AU - Itoh, Nobuyuki

AU - Yoshimasu, Toshihiko

PY - 2015/6/9

Y1 - 2015/6/9

N2 - In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

AB - In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

KW - Back-gate voltage

KW - High efficiency

KW - Low supply voltage

KW - Third harmonic termination

UR - http://www.scopus.com/inward/record.url?scp=84942626934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942626934&partnerID=8YFLogxK

U2 - 10.1109/WAMICON.2015.7120389

DO - 10.1109/WAMICON.2015.7120389

M3 - Conference contribution

AN - SCOPUS:84942626934

SN - 9781479975211

BT - 2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -