A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu*, Zheng Sun, Kangyang Xu, Xin Yang, Taufiq Kurniawan, Toshihiko Yoshimasu

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

本文言語English
ホスト出版物のタイトルRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
ホスト出版物のサブタイトルSilicon Technology Heats Up for THz
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479955039
DOI
出版ステータスPublished - 2014 10 21
イベント2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
継続期間: 2014 8 272014 8 30

出版物シリーズ

名前RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
国/地域China
CityHefei
Period14/8/2714/8/30

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

フィンガープリント

「A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル