A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

元の言語English
ホスト出版物のタイトルEuropean Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
出版者Institute of Electrical and Electronics Engineers Inc.
ページ219-222
ページ数4
ISBN(印刷物)9782874870392
DOI
出版物ステータスPublished - 2015 12 2
イベント45th European Microwave Conference, EuMC 2015 - Paris, France
継続期間: 2015 9 72015 9 10

Other

Other45th European Microwave Conference, EuMC 2015
France
Paris
期間15/9/715/9/10

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Radiation

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  • これを引用

    Kurniawan, T. A., Yang, X., Xu, X., & Yoshimasu, T. (2015). A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. : European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC (pp. 219-222). [7345739] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2015.7345739