A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS

Tsuyoshi Sugiura; Cuilin Chen; Toshihiko Yoshimasu

doi:10.1109/APMC46564.2019.9038626

A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS

Tsuyoshi Sugiura, Cuilin Chen, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

This paper presents a 26 GHz band high efficiency power amplifier (PA) IC with adaptively controlled load and bias conditions. An adaptively controlled load matching circuit cooperating with an adaptive bias circuit is proposed to achieve a high efficiency PA IC in a broad range of input power. The chip of PA IC is fabricated using 40-nm silicon on insulator (SOI) CMOS process and evaluated on wafer. The fabricated PA IC has shown a peak PAE of 40.2% and a saturation output power (Psat) of 20.5 dBm with a 4.0 V applied voltage on Vdd at 26GHz. A PAE of over 35% at an input power between-2 dBm and 7 dBm has been realized.

本文言語	English
ホスト出版物のタイトル	Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	1700-1702
ページ数	3
ISBN（電子版）	9781728135175
DOI	https://doi.org/10.1109/APMC46564.2019.9038626
出版ステータス	Published - 2019 12月
イベント	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore 継続期間: 2019 12月 10 → 2019 12月 13

出版物シリーズ

名前	Asia-Pacific Microwave Conference Proceedings, APMC
巻	2019-December

Conference

Conference	2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
国/地域	Singapore
City	Singapore
Period	19/12/10 → 19/12/13

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/APMC46564.2019.9038626

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引用スタイル

Sugiura, T., Chen, C., & Yoshimasu, T. (2019). A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 (pp. 1700-1702). [9038626] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC46564.2019.9038626

A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. / Sugiura, Tsuyoshi; Chen, Cuilin; Yoshimasu, Toshihiko.

Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1700-1702 9038626 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2019-December).

研究成果: Conference contribution

Sugiura, T, Chen, C & Yoshimasu, T 2019, A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. in Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019., 9038626, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 1700-1702, 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019, Singapore, Singapore, 19/12/10. https://doi.org/10.1109/APMC46564.2019.9038626

Sugiura T, Chen C, Yoshimasu T. A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. In Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1700-1702. 9038626. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC46564.2019.9038626

Sugiura, Tsuyoshi ; Chen, Cuilin ; Yoshimasu, Toshihiko. / A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1700-1702 (Asia-Pacific Microwave Conference Proceedings, APMC).

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abstract = "This paper presents a 26 GHz band high efficiency power amplifier (PA) IC with adaptively controlled load and bias conditions. An adaptively controlled load matching circuit cooperating with an adaptive bias circuit is proposed to achieve a high efficiency PA IC in a broad range of input power. The chip of PA IC is fabricated using 40-nm silicon on insulator (SOI) CMOS process and evaluated on wafer. The fabricated PA IC has shown a peak PAE of 40.2% and a saturation output power (Psat) of 20.5 dBm with a 4.0 V applied voltage on Vdd at 26GHz. A PAE of over 35% at an input power between-2 dBm and 7 dBm has been realized.",

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