A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS

Tsuyoshi Sugiura, Cuilin Chen, Toshihiko Yoshimasu

研究成果: Conference contribution

抜粋

This paper presents a 26 GHz band high efficiency power amplifier (PA) IC with adaptively controlled load and bias conditions. An adaptively controlled load matching circuit cooperating with an adaptive bias circuit is proposed to achieve a high efficiency PA IC in a broad range of input power. The chip of PA IC is fabricated using 40-nm silicon on insulator (SOI) CMOS process and evaluated on wafer. The fabricated PA IC has shown a peak PAE of 40.2% and a saturation output power (Psat) of 20.5 dBm with a 4.0 V applied voltage on Vdd at 26GHz. A PAE of over 35% at an input power between-2 dBm and 7 dBm has been realized.

元の言語English
ホスト出版物のタイトルProceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1700-1702
ページ数3
ISBN(電子版)9781728135175
DOI
出版物ステータスPublished - 2019 12
イベント2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
継続期間: 2019 12 102019 12 13

出版物シリーズ

名前Asia-Pacific Microwave Conference Proceedings, APMC
2019-December

Conference

Conference2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
Singapore
Singapore
期間19/12/1019/12/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Sugiura, T., Chen, C., & Yoshimasu, T. (2019). A 26-GHz-band high efficiency stacked-FET power amplifier ic with adaptively controlled load and bias circuits in 40-nm SOI CMOS. : Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 (pp. 1700-1702). [9038626] (Asia-Pacific Microwave Conference Proceedings, APMC; 巻数 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC46564.2019.9038626