A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

研究成果: Conference contribution

抄録

This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

元の言語English
ホスト出版物のタイトル2019 IEEE Radio and Wireless Symposium, RWS 2019
出版者IEEE Computer Society
ISBN(電子版)9781538659441
DOI
出版物ステータスPublished - 2019 5 14
イベント2019 IEEE Radio and Wireless Symposium, RWS 2019 - Orlando, United States
継続期間: 2019 1 202019 1 23

出版物シリーズ

名前IEEE Radio and Wireless Symposium, RWS
ISSN(印刷物)2164-2958
ISSN(電子版)2164-2974

Conference

Conference2019 IEEE Radio and Wireless Symposium, RWS 2019
United States
Orlando
期間19/1/2019/1/23

Fingerprint

Field effect transistors
Power amplifiers
efficiency
Communication systems
communication system
Networks (circuits)
Electric potential
supply
trend

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

これを引用

Chen, C., Sugiura, T., & Yoshimasu, T. (2019). A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. : 2019 IEEE Radio and Wireless Symposium, RWS 2019 [8714268] (IEEE Radio and Wireless Symposium, RWS). IEEE Computer Society. https://doi.org/10.1109/RWS.2019.8714268

A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. / Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.

2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 2019. 8714268 (IEEE Radio and Wireless Symposium, RWS).

研究成果: Conference contribution

Chen, C, Sugiura, T & Yoshimasu, T 2019, A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. : 2019 IEEE Radio and Wireless Symposium, RWS 2019., 8714268, IEEE Radio and Wireless Symposium, RWS, IEEE Computer Society, 2019 IEEE Radio and Wireless Symposium, RWS 2019, Orlando, United States, 19/1/20. https://doi.org/10.1109/RWS.2019.8714268
Chen C, Sugiura T, Yoshimasu T. A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. : 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society. 2019. 8714268. (IEEE Radio and Wireless Symposium, RWS). https://doi.org/10.1109/RWS.2019.8714268
Chen, Cuilin ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 2019. (IEEE Radio and Wireless Symposium, RWS).
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abstract = "This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1{\%} at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 {\%} and 28.7 {\%}, respectively. The output IP3 of 25.0 dBm is obtained.",
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