A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu

doi:10.1109/RWS.2019.8714268

A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (g_m3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

本文言語	English
ホスト出版物のタイトル	2019 IEEE Radio and Wireless Symposium, RWS 2019
出版社	IEEE Computer Society
ISBN（電子版）	9781538659441
DOI	https://doi.org/10.1109/RWS.2019.8714268
出版ステータス	Published - 2019 5月 14
イベント	2019 IEEE Radio and Wireless Symposium, RWS 2019 - Orlando, United States 継続期間: 2019 1月 20 → 2019 1月 23

出版物シリーズ

名前	IEEE Radio and Wireless Symposium, RWS
ISSN（印刷版）	2164-2958
ISSN（電子版）	2164-2974

Conference

Conference	2019 IEEE Radio and Wireless Symposium, RWS 2019
国/地域	United States
City	Orlando
Period	19/1/20 → 19/1/23

ASJC Scopus subject areas

コンピュータネットワークおよび通信
コンピュータサイエンスの応用
電子工学および電気工学
通信

文献へのアクセス

10.1109/RWS.2019.8714268

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引用スタイル

Chen, C, Sugiura, T & Yoshimasu, T 2019, A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. in 2019 IEEE Radio and Wireless Symposium, RWS 2019., 8714268, IEEE Radio and Wireless Symposium, RWS, IEEE Computer Society, 2019 IEEE Radio and Wireless Symposium, RWS 2019, Orlando, United States, 19/1/20. https://doi.org/10.1109/RWS.2019.8714268

@inproceedings{5b2611677eb649d6b8313806c07557e0,

title = "A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS",

abstract = "This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.",

keywords = "5G, Adaptive bias, High efficiency, High linearity, SOI CMOS",

author = "Cuilin Chen and Tsuyoshi Sugiura and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Radio and Wireless Symposium, RWS 2019 ; Conference date: 20-01-2019 Through 23-01-2019",

year = "2019",

month = may,

day = "14",

doi = "10.1109/RWS.2019.8714268",

language = "English",

series = "IEEE Radio and Wireless Symposium, RWS",

publisher = "IEEE Computer Society",

booktitle = "2019 IEEE Radio and Wireless Symposium, RWS 2019",

}

TY - GEN

T1 - A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

AU - Chen, Cuilin

AU - Sugiura, Tsuyoshi

AU - Yoshimasu, Toshihiko

PY - 2019/5/14

Y1 - 2019/5/14

N2 - This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

AB - This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.

KW - 5G

KW - Adaptive bias

KW - High efficiency

KW - High linearity

KW - SOI CMOS

UR - http://www.scopus.com/inward/record.url?scp=85068662057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068662057&partnerID=8YFLogxK

U2 - 10.1109/RWS.2019.8714268

DO - 10.1109/RWS.2019.8714268

M3 - Conference contribution

AN - SCOPUS:85068662057

T3 - IEEE Radio and Wireless Symposium, RWS

BT - 2019 IEEE Radio and Wireless Symposium, RWS 2019

PB - IEEE Computer Society

T2 - 2019 IEEE Radio and Wireless Symposium, RWS 2019

Y2 - 20 January 2019 through 23 January 2019

ER -

A 28-GHz-band stacked FET linear power amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

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出版物シリーズ

Conference

ASJC Scopus subject areas

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