A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology

Cuilin Chen, Xin Yang, Toshihiko Yoshimasu

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.

元の言語English
ホスト出版物のタイトルRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509012350
DOI
出版物ステータスPublished - 2016 9 27
イベント2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
継続期間: 2016 8 242016 8 26

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Taiwan, Province of China
Taipei
期間16/8/2416/8/26

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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  • これを引用

    Chen, C., Yang, X., & Yoshimasu, T. (2016). A 30-GHz band high-efficiency Class-J power amplifier IC in 120-nm SiGe HBT technology. : RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578122] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578122