TY - GEN
T1 - A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT
AU - Chen, Cuilin
AU - Tuo, Fenfen
AU - Xu, Xiao
AU - Yoshimasu, Toshihiko
PY - 2016/9/27
Y1 - 2016/9/27
N2 - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.
AB - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.
KW - 120-nm SiGe HBT
KW - 30 GHz
KW - Low-insertion loss
KW - SPDT switch IC
UR - http://www.scopus.com/inward/record.url?scp=84994744828&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84994744828&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2016.7578134
DO - 10.1109/RFIT.2016.7578134
M3 - Conference contribution
AN - SCOPUS:84994744828
T3 - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Y2 - 24 August 2016 through 26 August 2016
ER -