A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

Cuilin Chen, Fenfen Tuo, Xiao Xu, Toshihiko Yoshimasu

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

元の言語English
ホスト出版物のタイトルRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509012350
DOI
出版物ステータスPublished - 2016 9 27
イベント2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
継続期間: 2016 8 242016 8 26

出版物シリーズ

名前RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Taiwan, Province of China
Taipei
期間16/8/2416/8/26

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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  • これを引用

    Chen, C., Tuo, F., Xu, X., & Yoshimasu, T. (2016). A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. : RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578134] (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578134