A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications

Fukashi Morishita, Isamu Hayashi, Hideto Matsuoka, Kazuhiro Takahashi, Kuniyasu Shigeta, Takayuki Gyohten, Mitsutaka Niiro, Hideyuki Noda, Mako Okamoto, Atsushi Hachisuka, Atsushi Amo, Hiroki Shinkawata, Tatsuo Kasaoka, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

    研究成果: Article

    14 引用 (Scopus)

    抜粋

    An embedded DRAM macro with a self-adjustable timing control (STC) scheme, a negative edge transmission scheme (NET), and a power-down data retention (PDDR) mode is developed. A 13.98-mm2 16-Mb embedded DRAM macro is fabricated in 0.13 μm logic-based embedded DRAM process. Co-salicide word lines and MIM capacitors are used for high-speed array operation. The delay timing variation of 36% for an RC delay can be reduced to 3.8% by using the STC scheme. The NET scheme transfers array control signals to local array blocks with high accuracy. Thereby, the test chip achieves 1.2-V 312-MHz random cycle operation even in the low-power process. 73-μW data retention power is realized by using the PDDR mode, which is 5% of conventional schemes.

    元の言語English
    ページ(範囲)204-210
    ページ数7
    ジャーナルIEEE Journal of Solid-State Circuits
    40
    発行部数1
    DOI
    出版物ステータスPublished - 2005 1

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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    Morishita, F., Hayashi, I., Matsuoka, H., Takahashi, K., Shigeta, K., Gyohten, T., Niiro, M., Noda, H., Okamoto, M., Hachisuka, A., Amo, A., Shinkawata, H., Kasaoka, T., Dosaka, K., Arimoto, K., Fujishima, K., Anami, K., & Yoshihara, T. (2005). A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications. IEEE Journal of Solid-State Circuits, 40(1), 204-210. https://doi.org/10.1109/JSSC.2004.837986