A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara

研究成果: Conference contribution

抄録

This paper presents an Enhancement-Enhancement (EE) SRAM physically unclonable function (PUF) with a dark-bit detection technique based on an integrated Vss-bias generator. The EE SRAM PUF cell improves native stability to 0.21% bit-error rate (BER). Bit cells that are potentially unstable due to environmental variations or aging are detected via the lightweight bias generator to ensure stability, and the effectiveness is verified with experimental results of dark-bit detection performed at room temperature. Measurement results of 10 chips in 130-nm CMOS show that after masking the detected dark bits, 1.3×10 -6 BER is achieved across 0.8-1.4 V/-40-120 °C VT corners. The nMOS-only bit cell is also highly compact (i.e., 373 F 2 ). Moreover, a 2D power-gating scheme is implemented for low operation energy, low standby power, and high attack tolerance.

元の言語English
ホスト出版物のタイトル2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ161-164
ページ数4
ISBN(電子版)9781538664124
DOI
出版物ステータスPublished - 2018 12 14
イベント2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan, Province of China
継続期間: 2018 11 52018 11 7

出版物シリーズ

名前2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

Conference

Conference2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
Taiwan, Province of China
Tainan
期間18/11/518/11/7

Fingerprint

Static random access storage
Bit error rate
Aging of materials
Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Liu, K., Min, Y., Yang, X., Sun, H., & Shinohara, H. (2018). A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 161-164). [8579315] (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2018.8579315

A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique . / Liu, Kunyang; Min, Yue; Yang, Xuan; Sun, Hanfeng; Shinohara, Hirofumi.

2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 161-164 8579315 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

研究成果: Conference contribution

Liu, K, Min, Y, Yang, X, Sun, H & Shinohara, H 2018, A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings., 8579315, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 161-164, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018, Tainan, Taiwan, Province of China, 18/11/5. https://doi.org/10.1109/ASSCC.2018.8579315
Liu K, Min Y, Yang X, Sun H, Shinohara H. A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique : 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 161-164. 8579315. (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). https://doi.org/10.1109/ASSCC.2018.8579315
Liu, Kunyang ; Min, Yue ; Yang, Xuan ; Sun, Hanfeng ; Shinohara, Hirofumi. / A 373 F 2 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 161-164 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).
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