A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Satoshi Kurachi, Yusuke Murata, Shohei Ishikawa, Nobuyuki Itoh, Koji Yonemura, Toshihiko Yoshimasu

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

元の言語English
ホスト出版物のタイトルProceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ページ9-12
ページ数4
DOI
出版物ステータスPublished - 2007 12 1
イベント2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States
継続期間: 2007 9 302007 10 2

出版物シリーズ

名前Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN(印刷物)1088-9299

Conference

Conference2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
United States
Boston, MA
期間07/9/3007/10/2

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Kurachi, S., Murata, Y., Ishikawa, S., Itoh, N., Yonemura, K., & Yoshimasu, T. (2007). A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. : Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 9-12). [4351827] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351827