抄録
We propose a new -port SRAM with a single read bit line (SRBL) eight transistors (8T) memory cell for a 45 nm system-on-a-chip (SoC). Access time tends to be slower as a fabrication is scaled down because of threshold voltage (Vt) random variations. A Divided read Bit line scheme with Shared local Amplifier (DBSA) realizes fast access time without increasing area penalty. We also show an additional important issue of a simultaneous Read and Write (RAV) access at the same row by using DBSA with the SRBL-8T cell. A rise of the storage node causes misreading. A Read End detecting Replica circuit (RER) and a Local read bit line Dummy Capacitance (LDC) are introduced to solve this issue. A 128 bit lines - 512 word lines 64 kb 2-port SRAM macro using these schemes was fabricated by a 45 nm bulk CMOS low-standby-power (LSTP) CMOS process technology [1]. The memory cell size is 0.597 μm3, This 2-port SRAM macro achieves 7 times faster access time without misreading.
本文言語 | English |
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ページ(範囲) | 938-943 |
ページ数 | 6 |
ジャーナル | IEEE Journal of Solid-State Circuits |
巻 | 43 |
号 | 4 |
DOI | |
出版ステータス | Published - 2008 1月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学