A 5-GHz band WLAN SiGe HBT power amplifier IC with novel adaptive-linearizing CMOS bias circuit

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

研究成果: Article査読

1 被引用数 (Scopus)

抄録

This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (V<inf>be</inf>) of RF amplifying HBT constant and adaptively increase the base current (I<inf>b</inf>) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35 μm SiGe BiCMOS technology. Under 54 Mbps OFDM signal at 5.4 GHz, the PA IC exhibits a measured small-signal gain of 29 dB, an EVM of 0.9% at 17 dBm output power and a DC current consumption of 284 mA.

本文言語English
ページ(範囲)651-658
ページ数8
ジャーナルIEICE Transactions on Electronics
E98C
7
DOI
出版ステータスPublished - 2015 7 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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