A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

研究成果: Conference contribution

11 被引用数 (Scopus)

抄録

The incubation (transit) time of the perpendicular magnetic tunnel junction (MTJ) is found shorter (longer) than the in-plane MTJ. By making use of the incubation time, a new concept is proposed for MTJ/CMOS hybrid circuits that operate as fast as CMOS circuits without operation power overhead and with negligible MTJ switching error. A nonvolatile latch based on the concept is fabricated in 90nm technology to demonstrate 600MHz stable operation.

本文言語English
ホスト出版物のタイトル2011 International Electron Devices Meeting, IEDM 2011
ページ4.3.1-4.3.4
DOI
出版ステータスPublished - 2011 12 1
外部発表はい
イベント2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
継続期間: 2011 12 52011 12 7

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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