A bulk-current model for advanced MOSFET technologies without binning: Substrate current and Fowler-Nordheim current

Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

    研究成果: Article査読

    抄録

    A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.

    本文言語English
    ページ(範囲)96-104
    ページ数9
    ジャーナルIEEJ Transactions on Electrical and Electronic Engineering
    5
    1
    DOI
    出版ステータスPublished - 2010 1

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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