抄録
A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 96-104 |
| ページ数 | 9 |
| ジャーナル | IEEJ Transactions on Electrical and Electronic Engineering |
| 巻 | 5 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2010 1月 |
ASJC Scopus subject areas
- 電子工学および電気工学